Hexon Technology Pte Ltd HEXON 1GB vs A-DATA Technology AO1P24HC4R1-BUYS 4GB

総合得点

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

総合得点

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

相違点仕様コメント

相違点

Hexon Technology Pte Ltd HEXON 1GB

考慮すべき理由
Hexon Technology Pte Ltd HEXON 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 15.1

テスト平均値

A-DATA Technology AO1P24HC4R1-BUYS 4GB

考慮すべき理由
A-DATA Technology AO1P24HC4R1-BUYS 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 62

周辺 -158% 低遅延
書き込み速度の高速化、GB/s

11.8 1,843.6

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

62 24
読み出し速度、GB/s

3,556.6 15.1
書き込み速度、GB/秒

1,843.6 11.8
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

542 2332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

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SK Hynix HYMP512U64CP8-Y5 1GB

G Skill Intl F4-3866C18-8GTZSW 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6AFR8A

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

Crucial Technology CT4G4DFS824A.C8FBD2 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston HP24D4U7S8MH-8 8GB

Kingston HP24D4U7S8MH-8 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB