Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Heoriady HX2666DT8G-TD 8GB

総合得点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

総合得点

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

相違点仕様コメント

相違点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 39

周辺 31% 低遅延
読み出し速度の高速化、GB/s

16.7 14.6

テスト平均値
書き込み速度の高速化、GB/s

11.8 10.1

テスト平均値

Heoriady HX2666DT8G-TD 8GB

考慮すべき理由
Heoriady HX2666DT8G-TD 8GB

バグを報告する

仕様

技術仕様の完全リスト

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Heoriady HX2666DT8G-TD 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

27 39
読み出し速度、GB/s

16.7 14.6
書き込み速度、GB/秒

11.8 10.1
メモリ帯域幅、mbps

21300 21300

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2756 2513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Patriot Memory (PDP Systems) PSD44G240081 4GB

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Micron Technology 8ATF2G64HZ-3G2B2 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB