Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs SK Hynix HMA851U6JJR6N-VK 4GB

総合得点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

総合得点

SK Hynix HMA851U6JJR6N-VK 4GB

SK Hynix HMA851U6JJR6N-VK 4GB

相違点仕様コメント

相違点

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 31

周辺 13% 低遅延
読み出し速度の高速化、GB/s

16.7 15.5

テスト平均値
書き込み速度の高速化、GB/s

11.8 9.9

テスト平均値

SK Hynix HMA851U6JJR6N-VK 4GB

考慮すべき理由
SK Hynix HMA851U6JJR6N-VK 4GB

バグを報告する

仕様

技術仕様の完全リスト

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA851U6JJR6N-VK 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

27 31
読み出し速度、GB/s

16.7 15.5
書き込み速度、GB/秒

11.8 9.9
メモリ帯域幅、mbps

21300 21300

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

2756 2060

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Hewlett-Packard 7EH61AA# 8GB

Hewlett-Packard 7EH61AA# 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905625-074.A00G 16GB

Kingston 9905625-074.A00G 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Mushkin MRB4U300GJJM16G 16GB

Mushkin MRB4U300GJJM16G 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Apacer Technology 78.CAGP7.4020B 8GB

Apacer Technology 78.CAGP7.4020B 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB