Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-3333C16-4GRKD 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

総合得点

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

バグを報告する

G Skill Intl F4-3333C16-4GRKD 4GB

考慮すべき理由
G Skill Intl F4-3333C16-4GRKD 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 29

周辺 -4% 低遅延
読み出し速度の高速化、GB/s

12.9 12.1

テスト平均値
書き込み速度の高速化、GB/s

10.3 7.8

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

G Skill Intl F4-3333C16-4GRKD 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 28
読み出し速度、GB/s

12.1 12.9
書き込み速度、GB/秒

7.8 10.3
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2177 2619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMW256GX4M8E3200C16 32GB

Corsair CMW256GX4M8E3200C16 32GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Kingston XJ69DF-MIE2 8GB

Kingston XJ69DF-MIE2 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Crucial Technology BLS8G4D26BFSE.16FBD2 8GB

Kingston 9965604-033.D00G 16GB

Kingston 9965604-033.D00G 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Panram International Corporation PUD42133C158G2VS 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB