Lexar Co Limited LD4AU016G-H3200GST 16GB vs SanMax Technologies Inc. SMD-8G28HP-21P 8GB

総合得点

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

総合得点

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

相違点仕様コメント

相違点

Lexar Co Limited LD4AU016G-H3200GST 16GB

考慮すべき理由
Lexar Co Limited LD4AU016G-H3200GST 16GB

バグを報告する

読み出し速度の高速化、GB/s

17.8 13.8

テスト平均値
書き込み速度の高速化、GB/s

12.5 10.3

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51% 高帯域

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

考慮すべき理由
SanMax Technologies Inc. SMD-8G28HP-21P 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 33

周辺 -22% 低遅延

仕様

技術仕様の完全リスト

Lexar Co Limited LD4AU016G-H3200GST 16GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

33 27
読み出し速度、GB/s

17.8 13.8
書き込み速度、GB/秒

12.5 10.3
メモリ帯域幅、mbps

25600 17000

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

3285 2140

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

G Skill Intl F4-4133C19-8GTZR 8GB

G Skill Intl F4-4133C19-8GTZR 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMR64GX4M8C3200C16 8GB

Corsair CMR64GX4M8C3200C16 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB