Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M471A5143EB1-CRC 4GB

総合得点

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

総合得点

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

相違点仕様コメント

相違点

Micron Technology 16JSF25664HZ-1G1F1 2GB

考慮すべき理由
Micron Technology 16JSF25664HZ-1G1F1 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 95

周辺 69% 低遅延

Samsung M471A5143EB1-CRC 4GB

考慮すべき理由
Samsung M471A5143EB1-CRC 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.8 10.5

テスト平均値
書き込み速度の高速化、GB/s

7.3 7.1

テスト平均値
より高いメモリ帯域幅、mbps

19200 8500

周辺 2.26 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A5143EB1-CRC 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 95
読み出し速度、GB/s

10.5 15.8
書き込み速度、GB/秒

7.1 7.3
メモリ帯域幅、mbps

8500 19200

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1425 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX2400C15/8G 8GB

Kingston KHX2400C15/8G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB