Micron Technology 16JTF51264HZ-1G6M1 4GB vs Panram International Corporation PUD42400C154GNJW 4GB

総合得点

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

総合得点

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

相違点仕様コメント

相違点

Micron Technology 16JTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16JTF51264HZ-1G6M1 4GB

バグを報告する

書き込み速度の高速化、GB/s

9.0 8.7

テスト平均値

Panram International Corporation PUD42400C154GNJW 4GB

考慮すべき理由
Panram International Corporation PUD42400C154GNJW 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 28

周辺 -4% 低遅延
読み出し速度の高速化、GB/s

13.7 12.9

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JTF51264HZ-1G6M1 4GB

Panram International Corporation PUD42400C154GNJW 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 27
読み出し速度、GB/s

12.9 13.7
書き込み速度、GB/秒

9.0 8.7
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2112 2193

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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