Micron Technology 16JTF51264HZ-1G6M1 4GB vs SK Hynix V-GeN D4H4GL30A8TX5 4GB

総合得点

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

総合得点

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

相違点仕様コメント

相違点

Micron Technology 16JTF51264HZ-1G6M1 4GB

考慮すべき理由
Micron Technology 16JTF51264HZ-1G6M1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 73

周辺 62% 低遅延
書き込み速度の高速化、GB/s

9.0 8.4

テスト平均値

SK Hynix V-GeN D4H4GL30A8TX5 4GB

考慮すべき理由
SK Hynix V-GeN D4H4GL30A8TX5 4GB

バグを報告する

読み出し速度の高速化、GB/s

15.8 12.9

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 73
読み出し速度、GB/s

12.9 15.8
書き込み速度、GB/秒

9.0 8.4
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2112 1822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Kingston KHX2400C15S4/4G 4GB

Kingston KHX2400C15S4/4G 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. DDR4 3000 4GB

Team Group Inc. DDR4 3000 4GB