Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

総合得点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

相違点仕様コメント

相違点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

考慮すべき理由
Micron Technology 8ATF2G64HZ-3G2E2 16GB

バグを報告する

読み出し速度の高速化、GB/s

15.6 12.2

テスト平均値
書き込み速度の高速化、GB/s

11.8 9.6

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 51

周辺 -76% 低遅延

仕様

技術仕様の完全リスト

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

51 29
読み出し速度、GB/s

15.6 12.2
書き込み速度、GB/秒

11.8 9.6
メモリ帯域幅、mbps

25600 17000

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2687 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK16GX4M4A2133C15 4GB

Corsair CMK16GX4M4A2133C15 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-4000C18-16GTRS 16GB

G Skill Intl F4-4000C18-16GTRS 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3600C14-16GTRS 16GB

G Skill Intl F4-3600C14-16GTRS 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB