Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingmax Semiconductor GLLF62F-DA---------- 4GB

総合得点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

総合得点

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

相違点仕様コメント

相違点

Micron Technology 8ATF2G64HZ-3G2E2 16GB

考慮すべき理由
Micron Technology 8ATF2G64HZ-3G2E2 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

51 73

周辺 30% 低遅延
読み出し速度の高速化、GB/s

15.6 15.5

テスト平均値
書き込み速度の高速化、GB/s

11.8 7.8

テスト平均値
より高いメモリ帯域幅、mbps

25600 19200

周辺 1.33% 高帯域

Kingmax Semiconductor GLLF62F-DA---------- 4GB

考慮すべき理由
Kingmax Semiconductor GLLF62F-DA---------- 4GB

バグを報告する

仕様

技術仕様の完全リスト

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

51 73
読み出し速度、GB/s

15.6 15.5
書き込み速度、GB/秒

11.8 7.8
メモリ帯域幅、mbps

25600 19200

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2687 1853

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Kingmax Semiconductor GLLF62F-DA---------- 4GB

Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB

Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB

Essencore Limited 8GBF1X08QFHH38-135-K 8GB