Nanya Technology M2X4G64CB8HG9N-DG 4GB vs G Skill Intl F4-3600C17-16GTZR 16GB

総合得点

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

総合得点

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

相違点仕様コメント

相違点

Nanya Technology M2X4G64CB8HG9N-DG 4GB

考慮すべき理由
Nanya Technology M2X4G64CB8HG9N-DG 4GB

バグを報告する

G Skill Intl F4-3600C17-16GTZR 16GB

考慮すべき理由
G Skill Intl F4-3600C17-16GTZR 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 36

周辺 -16% 低遅延
読み出し速度の高速化、GB/s

17.2 14.9

テスト平均値
書き込み速度の高速化、GB/s

15.7 9.5

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2X4G64CB8HG9N-DG 4GB

G Skill Intl F4-3600C17-16GTZR 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

36 31
読み出し速度、GB/s

14.9 17.2
書き込み速度、GB/秒

9.5 15.7
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2292 3652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK32GX4M4C3400C16 8GB

Corsair CMK32GX4M4C3400C16 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT8G4DFS8213.M8FA 8GB

Crucial Technology CT8G4DFS8213.M8FA 8GB