Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Samsung M471A4G43AB1-CWE 32GB

総合得点

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

総合得点

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

相違点仕様コメント

相違点

Nanya Technology M2X4G64CB8HG9N-DG 4GB

考慮すべき理由
Nanya Technology M2X4G64CB8HG9N-DG 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

36 45

周辺 20% 低遅延

Samsung M471A4G43AB1-CWE 32GB

考慮すべき理由
Samsung M471A4G43AB1-CWE 32GB

バグを報告する

読み出し速度の高速化、GB/s

15.6 14.9

テスト平均値
書き込み速度の高速化、GB/s

12.8 9.5

テスト平均値
より高いメモリ帯域幅、mbps

25600 12800

周辺 2 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M471A4G43AB1-CWE 32GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

36 45
読み出し速度、GB/s

14.9 15.6
書き込み速度、GB/秒

9.5 12.8
メモリ帯域幅、mbps

12800 25600

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
タイミング / クロック速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2292 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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