Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

総合得点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

相違点仕様コメント

相違点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

考慮すべき理由
Nanya Technology NT2GT64U8HD0BN-AD 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 11.3

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

32 72

周辺 -125% 低遅延
書き込み速度の高速化、GB/s

7.6 1,938.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

72 32
読み出し速度、GB/s

4,241.0 11.3
書き込み速度、GB/秒

1,938.7 7.6
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

677 2292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

Essencore Limited IM4AGU88N24-FFFHMB 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

King Tiger Technology Tigo-X3-3200MHz-8G 8GB

King Tiger Technology Tigo-X3-3200MHz-8G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Micron Technology 8ATF1G64AZ-3G2J1 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Corsair CMK64GX4M8X3600C18 8GB

Corsair CMK64GX4M8X3600C18 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

Crucial Technology BLS4G4D26BFSE.8FD2 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Crucial Technology BLT8G4D30AETA.K16FE 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB