Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Nanya Technology NT4GC64B8HB0NF-CG 4GB

総合得点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

総合得点

Nanya Technology NT4GC64B8HB0NF-CG 4GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

相違点仕様コメント

相違点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

考慮すべき理由
Nanya Technology NT2GT64U8HD0BN-AD 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 14.2

テスト平均値

Nanya Technology NT4GC64B8HB0NF-CG 4GB

考慮すべき理由
Nanya Technology NT4GC64B8HB0NF-CG 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 72

周辺 -167% 低遅延
書き込み速度の高速化、GB/s

8.6 1,938.7

テスト平均値
より高いメモリ帯域幅、mbps

10600 6400

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

主な特徴

メモリータイプ

DDR2 DDR3
PassMarkにおけるレイテンシー、ns

72 27
読み出し速度、GB/s

4,241.0 14.2
書き込み速度、GB/秒

1,938.7 8.6
メモリ帯域幅、mbps

6400 10600

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
タイミング / クロック速度

5-5-5-15 / 800 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

677 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

Nanya Technology NT4GC64B8HB0NF-CG 4GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Corsair CML32GX3M4A1600C10 8GB

Corsair CML32GX3M4A1600C10 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung V-GeN D4S8GL32A8TL 8GB

Samsung V-GeN D4S8GL32A8TL 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Golden Empire CL16-18-18 D4-2666 8GB

Golden Empire CL16-18-18 D4-2666 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905665-014.A00G 4GB

Kingston 9905665-014.A00G 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

A-DATA Technology AM2P24HC4R1-BUPS 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB