Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

総合得点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

総合得点

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

相違点仕様コメント

相違点

Nanya Technology NT2GT64U8HD0BN-AD 2GB

考慮すべき理由
Nanya Technology NT2GT64U8HD0BN-AD 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 15.3

テスト平均値

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

考慮すべき理由
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

バグを報告する

書き込み速度の高速化、GB/s

8.0 1,938.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

72 72
読み出し速度、GB/s

4,241.0 15.3
書き込み速度、GB/秒

1,938.7 8.0
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

677 1817

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

Crucial Technology CT16G4DFD824A.C16FDD 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMR16GX4M2E4266C19 8GB

Corsair CMR16GX4M2E4266C19 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905701-022.A00G 16GB

Kingston 9905701-022.A00G 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB

Essencore Limited IM48GU88N26-FFFHMZ 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

A-DATA Technology DDR3 1600 2OZ 4GB

A-DATA Technology DDR3 1600 2OZ 4GB