Samsung 1600 CL10 Series 8GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

総合得点

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

総合得点

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

相違点仕様コメント

相違点

Samsung 1600 CL10 Series 8GB

考慮すべき理由
Samsung 1600 CL10 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

25 52

周辺 52% 低遅延
読み出し速度の高速化、GB/s

16.1 10

テスト平均値
書き込み速度の高速化、GB/s

10.1 7.6

テスト平均値

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

考慮すべき理由
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

バグを報告する

より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung 1600 CL10 Series 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

25 52
読み出し速度、GB/s

16.1 10.0
書き込み速度、GB/秒

10.1 7.6
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2764 2169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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