Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 8ATF51264HZ-2G1A2 4GB

総合得点

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

総合得点

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

相違点仕様コメント

相違点

Samsung M3 78T3354BZ0-CCC 256MB

考慮すべき理由
Samsung M3 78T3354BZ0-CCC 256MB

バグを報告する

読み出し速度の高速化、GB/s

2 13.6

テスト平均値

Micron Technology 8ATF51264HZ-2G1A2 4GB

考慮すべき理由
Micron Technology 8ATF51264HZ-2G1A2 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

36 46

周辺 -28% 低遅延
書き込み速度の高速化、GB/s

9.0 1,519.2

テスト平均値
より高いメモリ帯域幅、mbps

17000 3200

周辺 5.31 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 8ATF51264HZ-2G1A2 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 36
読み出し速度、GB/s

2,909.8 13.6
書き込み速度、GB/秒

1,519.2 9.0
メモリ帯域幅、mbps

3200 17000

Other

商品説明

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

241 1778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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