Samsung M3 78T5663EH3-CF7 2GB vs Patriot Memory (PDP Systems) 2133 C14 Series 8GB

総合得点

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

総合得点

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

相違点仕様コメント

相違点

Samsung M3 78T5663EH3-CF7 2GB

考慮すべき理由
Samsung M3 78T5663EH3-CF7 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 13.7

テスト平均値

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

考慮すべき理由
Patriot Memory (PDP Systems) 2133 C14 Series 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

39 65

周辺 -67% 低遅延
書き込み速度の高速化、GB/s

9.4 2,451.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663EH3-CF7 2GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

65 39
読み出し速度、GB/s

4,605.9 13.7
書き込み速度、GB/秒

2,451.8 9.4
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

878 2397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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