Samsung M3 78T5663RZ3-CE6 2GB vs Apacer Technology 78.BAGSR.4030B 4GB

総合得点

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

総合得点

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

相違点仕様コメント

相違点

Samsung M3 78T5663RZ3-CE6 2GB

考慮すべき理由
Samsung M3 78T5663RZ3-CE6 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

60 73

周辺 18% 低遅延
読み出し速度の高速化、GB/s

4 14.5

テスト平均値

Apacer Technology 78.BAGSR.4030B 4GB

考慮すべき理由
Apacer Technology 78.BAGSR.4030B 4GB

バグを報告する

書き込み速度の高速化、GB/s

7.7 2,168.2

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663RZ3-CE6 2GB

Apacer Technology 78.BAGSR.4030B 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

60 73
読み出し速度、GB/s

4,595.2 14.5
書き込み速度、GB/秒

2,168.2 7.7
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

941 1700

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Wilk Elektronik S.A. GR2133S464L15/8G 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Chun Well Technology Holding Limited D4U0836144B 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Transcend Information TS2GLH64V1B 16GB

Transcend Information TS2GLH64V1B 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

Ramaxel Technology RMSA3230KB78HAF2133 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMR16GX4M2C3000C15 8GB

Corsair CMR16GX4M2C3000C15 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240