Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-3000C16-16GTRS 16GB

総合得点

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

総合得点

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

相違点仕様コメント

相違点

Samsung M3 78T5663RZ3-CE6 2GB

考慮すべき理由
Samsung M3 78T5663RZ3-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 18.7

テスト平均値
書き込み速度の高速化、GB/s

2,168.2 15.4

テスト平均値

G Skill Intl F4-3000C16-16GTRS 16GB

考慮すべき理由
G Skill Intl F4-3000C16-16GTRS 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 60

周辺 -122% 低遅延
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3000C16-16GTRS 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

60 27
読み出し速度、GB/s

4,595.2 18.7
書き込み速度、GB/秒

2,168.2 15.4
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

941 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2P24HC8T1-BUSS 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9905625-076.A00G 8GB

Kingston 9905625-076.A00G 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A1G43DB0-CPB 8GB

Samsung M393A1G43DB0-CPB 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

Smart Modular SF4641G8CK8I8GKSBG 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMT32GX4M2E3200C16 16GB

Corsair CMT32GX4M2E3200C16 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Lenovo LMKU8G68AHFHD-32A 8GB

Lenovo LMKU8G68AHFHD-32A 8GB