Samsung M3 78T5663RZ3-CE6 2GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

総合得点

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

総合得点

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

相違点仕様コメント

相違点

Samsung M3 78T5663RZ3-CE6 2GB

考慮すべき理由
Samsung M3 78T5663RZ3-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 11.7

テスト平均値

Memphis Electronic D4SO1G724GI-A58SD 8GB

考慮すべき理由
Memphis Electronic D4SO1G724GI-A58SD 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 60

周辺 -100% 低遅延
書き込み速度の高速化、GB/s

6.6 2,168.2

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

Samsung M3 78T5663RZ3-CE6 2GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

60 30
読み出し速度、GB/s

4,595.2 11.7
書き込み速度、GB/秒

2,168.2 6.6
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

941 1832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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