Samsung M3 93T5750CZA-CE6 2GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 15.7

テスト平均値
書き込み速度の高速化、GB/s

2,622.0 13.3

テスト平均値

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

考慮すべき理由
Chun Well Technology Holding Limited MD4U1632161DCW 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 77

周辺 -148% 低遅延
より高いメモリ帯域幅、mbps

21300 5300

周辺 4.02 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Chun Well Technology Holding Limited MD4U1632161DCW 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 31
読み出し速度、GB/s

3,405.2 15.7
書き込み速度、GB/秒

2,622.0 13.3
メモリ帯域幅、mbps

5300 21300

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

763 3318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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