Samsung M3 93T5750CZA-CE6 2GB vs Good Wealth Technology Ltd. KETECH 8GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 17.5

テスト平均値
書き込み速度の高速化、GB/s

2,622.0 11.8

テスト平均値

Good Wealth Technology Ltd. KETECH 8GB

考慮すべき理由
Good Wealth Technology Ltd. KETECH 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 77

周辺 -166% 低遅延
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Good Wealth Technology Ltd. KETECH 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 29
読み出し速度、GB/s

3,405.2 17.5
書き込み速度、GB/秒

2,622.0 11.8
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

763 3392

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

Kingston ACR512X64D3S13C9G 4GB

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Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

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Samsung M378A1K43DB2-CTD 8GB

G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Avant Technology J641GU42J9266NL 8GB

Avant Technology J641GU42J9266NL 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK32GX4M4A2666C16 8GB

Corsair CMK32GX4M4A2666C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB