Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 15.6

テスト平均値
書き込み速度の高速化、GB/s

2,622.0 11.9

テスト平均値

Micron Technology 8ATF1G64HZ-3G2J1 8GB

考慮すべき理由
Micron Technology 8ATF1G64HZ-3G2J1 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

34 77

周辺 -126% 低遅延
より高いメモリ帯域幅、mbps

25600 5300

周辺 4.83 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 34
読み出し速度、GB/s

3,405.2 15.6
書き込み速度、GB/秒

2,622.0 11.9
メモリ帯域幅、mbps

5300 25600

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
タイミング / クロック速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

763 2812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

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