Samsung M378A1K43DB2-CTD 8GB vs Crucial Technology CB8GU2400.C8D 8GB

総合得点

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

総合得点

Crucial Technology CB8GU2400.C8D 8GB

Crucial Technology CB8GU2400.C8D 8GB

相違点仕様コメント

相違点

Samsung M378A1K43DB2-CTD 8GB

考慮すべき理由
Samsung M378A1K43DB2-CTD 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

33 76

周辺 57% 低遅延
読み出し速度の高速化、GB/s

16 13.3

テスト平均値
書き込み速度の高速化、GB/s

12.1 7.0

テスト平均値
より高いメモリ帯域幅、mbps

21300 19200

周辺 1.11% 高帯域

Crucial Technology CB8GU2400.C8D 8GB

考慮すべき理由
Crucial Technology CB8GU2400.C8D 8GB

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仕様

技術仕様の完全リスト

Samsung M378A1K43DB2-CTD 8GB

Crucial Technology CB8GU2400.C8D 8GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

33 76
読み出し速度、GB/s

16.0 13.3
書き込み速度、GB/秒

12.1 7.0
メモリ帯域幅、mbps

21300 19200

Other

商品説明

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2947 1513

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新の比較

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Crucial Technology CB8GU2400.C8D 8GB

Crucial Technology CB8GU2400.C8D 8GB

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Panram International Corporation D4N2666PS-16G 16GB

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Kingston 99U5624-003.A00G 8GB

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Kingston 9905701-143.A00G 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8

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Kingston 9905701-004.A00G 16GB

Kingston 9905701-004.A00G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB