Samsung M378A1K43EB2-CWE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

総合得点

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

相違点仕様コメント

相違点

Samsung M378A1K43EB2-CWE 8GB

考慮すべき理由
Samsung M378A1K43EB2-CWE 8GB

バグを報告する

読み出し速度の高速化、GB/s

17.6 13.8

テスト平均値
書き込み速度の高速化、GB/s

12.0 10.1

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51% 高帯域

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 33

周辺 -18% 低遅延

仕様

技術仕様の完全リスト

Samsung M378A1K43EB2-CWE 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

33 28
読み出し速度、GB/s

17.6 13.8
書き込み速度、GB/秒

12.0 10.1
メモリ帯域幅、mbps

25600 17000

Other

商品説明

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2910 2179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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