Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

総合得点

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

相違点仕様コメント

相違点

Samsung M378B5173BH0-CH9 4GB

考慮すべき理由
Samsung M378B5173BH0-CH9 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 29

周辺 21% 低遅延

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

バグを報告する

読み出し速度の高速化、GB/s

13.7 13.4

テスト平均値
書き込み速度の高速化、GB/s

9.8 8.0

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Samsung M378B5173BH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

23 29
読み出し速度、GB/s

13.4 13.7
書き込み速度、GB/秒

8.0 9.8
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2269 2407

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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