Samsung M393B1G70QH0-YK0 8GB vs Essencore Limited IM44GU48N26-FFFHM 4GB

総合得点

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

総合得点

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

相違点仕様コメント

相違点

Samsung M393B1G70QH0-YK0 8GB

考慮すべき理由
Samsung M393B1G70QH0-YK0 8GB

バグを報告する

Essencore Limited IM44GU48N26-FFFHM 4GB

考慮すべき理由
Essencore Limited IM44GU48N26-FFFHM 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

21 52

周辺 -148% 低遅延
読み出し速度の高速化、GB/s

15.9 9.8

テスト平均値
書き込み速度の高速化、GB/s

12.2 8.0

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Samsung M393B1G70QH0-YK0 8GB

Essencore Limited IM44GU48N26-FFFHM 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

52 21
読み出し速度、GB/s

9.8 15.9
書き込み速度、GB/秒

8.0 12.2
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2179 3089

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston HP32D4S2S1ME-8 8GB

Kingston HP32D4S2S1ME-8 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB