Samsung M393B1K70QB0-CK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

総合得点

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

相違点仕様コメント

相違点

Samsung M393B1K70QB0-CK0 8GB

考慮すべき理由
Samsung M393B1K70QB0-CK0 8GB

バグを報告する

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 47

周辺 -52% 低遅延
読み出し速度の高速化、GB/s

12.5 10.4

テスト平均値
書き込み速度の高速化、GB/s

9.4 7.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung M393B1K70QB0-CK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

47 31
読み出し速度、GB/s

10.4 12.5
書き込み速度、GB/秒

7.8 9.4
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2169 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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