Samsung M393B2G70BH0-CH9 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

総合得点

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

相違点仕様コメント

相違点

Samsung M393B2G70BH0-CH9 16GB

考慮すべき理由
Samsung M393B2G70BH0-CH9 16GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 33

周辺 -10% 低遅延
読み出し速度の高速化、GB/s

10 8

テスト平均値
書き込み速度の高速化、GB/s

8.5 7.3

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

33 30
読み出し速度、GB/s

8.0 10.0
書き込み速度、GB/秒

7.3 8.5
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1911 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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