Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

総合得点

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

相違点仕様コメント

相違点

Samsung M471B5273CH0-CH9 4GB

考慮すべき理由
Samsung M471B5273CH0-CH9 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 48

周辺 -78% 低遅延
読み出し速度の高速化、GB/s

13.8 8.9

テスト平均値
書き込み速度の高速化、GB/s

9.8 5.9

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

48 27
読み出し速度、GB/s

8.9 13.8
書き込み速度、GB/秒

5.9 9.8
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1420 2323

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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