Samsung M471B5273DH0-CH9 4GB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

総合得点

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

総合得点

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

相違点仕様コメント

相違点

Samsung M471B5273DH0-CH9 4GB

考慮すべき理由
Samsung M471B5273DH0-CH9 4GB

バグを報告する

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

考慮すべき理由
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

34 47

周辺 -38% 低遅延
読み出し速度の高速化、GB/s

17.3 9.3

テスト平均値
書き込み速度の高速化、GB/s

14.5 5.9

テスト平均値
より高いメモリ帯域幅、mbps

17000 10600

周辺 1.6 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5273DH0-CH9 4GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

47 34
読み出し速度、GB/s

9.3 17.3
書き込み速度、GB/秒

5.9 14.5
メモリ帯域幅、mbps

10600 17000

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
タイミング / クロック速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

1413 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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