SK Hynix HMA451U6AFR8N-TF 4GB vs Samsung M378A5244CB0-CWE 4GB

総合得点

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

総合得点

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

相違点仕様コメント

相違点

SK Hynix HMA451U6AFR8N-TF 4GB

考慮すべき理由
SK Hynix HMA451U6AFR8N-TF 4GB

バグを報告する

Samsung M378A5244CB0-CWE 4GB

考慮すべき理由
Samsung M378A5244CB0-CWE 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

34 37

周辺 -9% 低遅延
読み出し速度の高速化、GB/s

16.7 14.7

テスト平均値
書き込み速度の高速化、GB/s

12.3 10.6

テスト平均値
より高いメモリ帯域幅、mbps

25600 17000

周辺 1.51 高帯域

仕様

技術仕様の完全リスト

SK Hynix HMA451U6AFR8N-TF 4GB

Samsung M378A5244CB0-CWE 4GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

37 34
読み出し速度、GB/s

14.7 16.7
書き込み速度、GB/秒

10.6 12.3
メモリ帯域幅、mbps

17000 25600

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

2438 2584

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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