STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

総合得点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

総合得点

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

相違点仕様コメント

相違点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

考慮すべき理由
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 13.9

テスト平均値

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

考慮すべき理由
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 63

周辺 -163% 低遅延
書き込み速度の高速化、GB/s

6.5 1,447.3

テスト平均値
より高いメモリ帯域幅、mbps

19200 5300

周辺 3.62 高帯域

仕様

技術仕様の完全リスト

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

63 24
読み出し速度、GB/s

3,231.0 13.9
書き込み速度、GB/秒

1,447.3 6.5
メモリ帯域幅、mbps

5300 19200

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

478 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

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