STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB

総合得点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

総合得点

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

相違点仕様コメント

相違点

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

考慮すべき理由
STEC (Silicon Tech) S1024R3NN2QK-I 1GB

バグを報告する

読み出し速度の高速化、GB/s

3 17.3

テスト平均値

Micron Technology 4ATF51264AZ-3G2J1 4GB

考慮すべき理由
Micron Technology 4ATF51264AZ-3G2J1 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

34 63

周辺 -85% 低遅延
書き込み速度の高速化、GB/s

12.0 1,447.3

テスト平均値
より高いメモリ帯域幅、mbps

25600 5300

周辺 4.83 高帯域

仕様

技術仕様の完全リスト

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

63 34
読み出し速度、GB/s

3,231.0 17.3
書き込み速度、GB/秒

1,447.3 12.0
メモリ帯域幅、mbps

5300 25600

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
タイミング / クロック速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

478 2665

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

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