takeMS International AG TMS2GB264D082-805G 2GB vs Kingston KHX2800C14D4/4GX 4GB

総合得点

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

総合得点

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

相違点仕様コメント

相違点

takeMS International AG TMS2GB264D082-805G 2GB

考慮すべき理由
takeMS International AG TMS2GB264D082-805G 2GB

バグを報告する

読み出し速度の高速化、GB/s

5 16.8

テスト平均値

Kingston KHX2800C14D4/4GX 4GB

考慮すべき理由
Kingston KHX2800C14D4/4GX 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

30 46

周辺 -53% 低遅延
書き込み速度の高速化、GB/s

13.2 1,852.4

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

takeMS International AG TMS2GB264D082-805G 2GB

Kingston KHX2800C14D4/4GX 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

46 30
読み出し速度、GB/s

5,535.6 16.8
書き込み速度、GB/秒

1,852.4 13.2
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 8 13 18 23 29 34 35 36 37 38
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

858 2996

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston KHX2800C14D4/4GX 4GB

Kingston KHX2800C14D4/4GX 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Avant Technology W641GU48J5213ND 8GB

Avant Technology W641GU48J5213ND 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Essencore Limited IM48GU48N24-FFFHM 8GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

JUHOR JHD2666U1908JG 8GB

JUHOR JHD2666U1908JG 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB