TwinMOS 8DPT5MK8-TATP 2GB vs A Force Manufacturing Ltd. UD-01G64V2133P 8GB

総合得点

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

総合得点

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

相違点仕様コメント

相違点

TwinMOS 8DPT5MK8-TATP 2GB

考慮すべき理由
TwinMOS 8DPT5MK8-TATP 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 17.5

テスト平均値

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

考慮すべき理由
A Force Manufacturing Ltd. UD-01G64V2133P 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 53

周辺 -83% 低遅延
書き込み速度の高速化、GB/s

12.8 1,590.1

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

TwinMOS 8DPT5MK8-TATP 2GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

53 29
読み出し速度、GB/s

3,726.4 17.5
書き込み速度、GB/秒

1,590.1 12.8
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

522 3086

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

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Corsair CMK16GX4M2C3200C16 8GB

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Kingston 99U5595-005.A00LF 2GB

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Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMW64GX4M4C3466C16 16GB

Corsair CMW64GX4M4C3466C16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4DFS8266.C8FE 16GB

Crucial Technology CT16G4DFS8266.C8FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB