A-DATA Technology DOVF1B163G2G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

A-DATA Technology DOVF1B163G2G 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Wynik ogólny

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Wynik ogólny

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Różnice Specyfikacje Uwagi

Różnice

A-DATA Technology DOVF1B163G2G 2GB

Powody do rozważenia
A-DATA Technology DOVF1B163G2G 2GB

Większa szybkość odczytu, GB/s

4 20.1

Średnia wartość w badaniach

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Powody do rozważenia
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Większa szybkość zapisu, GB/s

10.5 1,925.7

Średnia wartość w badaniach
Wyższa przepustowość pamięci, mbps

19200 6400

Wokół strony 3 większa szerokość pasma

Specyfikacje

Pełna lista specyfikacji technicznych

A-DATA Technology DOVF1B163G2G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Główna charakterystyka

Typ pamięci

DDR2 DDR4
Opóźnienie w PassMark, ns

56 56
Prędkość odczytu, GB/s

4,315.2 20.1
Prędkość zapisu, GB/s

1,925.7 10.5
Szerokość pasma pamięci, mbps

6400 19200

Other

Opis

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Taktowanie / szybkość zegara

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (im więcej tym lepiej)

658 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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