Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4DFD824A.C16FADP 8GB

Wynik ogólny

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Wynik ogólny

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Różnice Specyfikacje Uwagi

Różnice

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Powody do rozważenia
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Powody do rozważenia
Crucial Technology CT8G4DFD824A.C16FADP 8GB

Większa szybkość odczytu, GB/s

17.1 16

Średnia wartość w badaniach
Większa szybkość zapisu, GB/s

13.6 12.5

Średnia wartość w badaniach

Specyfikacje

Pełna lista specyfikacji technicznych

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4DFD824A.C16FADP 8GB

Główna charakterystyka

Typ pamięci

DDR4 DDR4
Opóźnienie w PassMark, ns

24 24
Prędkość odczytu, GB/s

16.0 17.1
Prędkość zapisu, GB/s

12.5 13.6
Szerokość pasma pamięci, mbps

19200 19200

Other

Opis

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Taktowanie / szybkość zegara

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (im więcej tym lepiej)

2925 3079

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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