PNY Electronics 4GBH2X02E99927-16 4GB
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PNY Electronics 4GBH2X02E99927-16 4GB

Review RAM PNY Electronics 4GBH2X02E99927-16 4GB, specifications, benchmarks

PNY Electronics 4GBH2X02E99927-16 4GB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR3
  • Name
    PNY Electronics 4GBH2X02E99927-16
  • Characteristics
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Memory bandwidth
    10600 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    7-7-7-20 / 1333 MHz
Performance by PassMark
  • Latency
    63 ns
  • Read speed
    6.1 GB/s
  • Write speed
    5.0 GB/s
# 1066 1333 1600 1866 2000 2133 2400 2600 2666 2800 2933 3000 3100 3200 MT/s
7 13.13 10.50 8.75 7.50 7.00 6.56 5.83 5.38 5.25 5.00 4.77 4.67 4.52 4.38
8 15.01 12.00 10.00 8.57 8.00 7.50 6.67 6.15 6.00 5.71 5.46 5.33 5.16 5.00
9 16.89 13.50 11.25 9.65 9.00 8.44 7.50 6.92 6.75 6.43 6.14 6.00 5.81 5.63
10 18.76 15.00 12.50 10.72 10.00 9.38 8.33 7.69 7.50 7.14 6.82 6.67 6.45 6.25
11 20.64 16.50 13.75 11.79 11.00 10.31 9.17 8.46 8.25 7.86 7.50 7.33 7.10 6.88
12 22.51 18.00 15.00 12.86 12.00 11.25 10.00 9.23 9.00 8.57 8.18 8.00 7.74 7.50
13 24.39 19.50 16.25 13.93 13.00 12.19 10.83 10.00 9.75 9.29 8.86 8.67 8.39 8.13
14 26.27 21.01 17.50 15.01 14.00 13.13 11.67 10.77 10.50 10.00 9.55 9.33 9.03 8.75
15 28.14 22.51 18.75 16.08 15.00 14.06 12.50 11.54 11.25 10.71 10.23 10.00 9.68 9.38
16 30.02 24.01 20.00 17.15 16.00 15.00 13.33 12.31 12.00 11.43 10.91 10.67 10.32 10.00
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests PNY Electronics 4GBH2X02E99927-16 4GB
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PNY Electronics 4GBH2X02E99927-16 4GB