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Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB vs Crucial Technology CT4G4DFS8213.8FA11 4GB

Pontuação geral
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Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Pontuação geral
star star star star star
Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Diferenças Especificações Comentários

Especificações

Lista completa de especificações técnicas
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Características principais
  • Tipo de memória
    DDR4 left arrow DDR4
  • Latência em PassMark, ns
    24 left arrow 24
  • Velocidade de leitura, GB/s
    15.4 left arrow 15.4
  • Velocidade de escrita, GB/s
    11.5 left arrow 11.5
  • Largura de banda de memória, mbps
    17000 left arrow 17000
Other
  • Descrição
    PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Tempos / Velocidade do relógio
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (Quanto mais, melhor)
    2534 left arrow 2534

Crucial Technology CT4G4DFS8213.8FA11 4GB Comparações de RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB Comparações de RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Últimas comparações

Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Memória RAM
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Micron Technology 9ASF1G72PZ-2G3A1 8GB
Memória RAM
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Micron Technology 72ASS8G72LZ-2G3B2 64GB
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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Kingston 9905744-077.A00G 16GB
Memória RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
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Memória RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
G Skill Intl F4-4000C16-8GVK 8GB
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Memória RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston KHX2666C16/8G 8GB
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Samsung M393B1K70CH0-CH9 8GB
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Chun Well Technology Holding Limited MD4U1632160DCW 16G
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Unifosa Corporation HU564404EP0200 4GB
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Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
Memória RAM