RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Comparar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Relatar um erro
Velocidade de escrita mais rápida, GB/s
12.5
10.8
Valor médio nos testes
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Relatar um erro
Especificações
Lista completa de especificações técnicas
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
24
24
Velocidade de leitura, GB/s
16.0
16.0
Velocidade de escrita, GB/s
12.5
10.8
Largura de banda de memória, mbps
19200
19200
Other
Descrição
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)
2925
2731
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparações de RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB Comparações de RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
SK Hynix DDR2 800 2G 2GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology CT2K102464BD160B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Kingston 9905458-017.A01LF 4GB
Kingston 99U5469-052.A00LF 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CM4X8GF2400Z16K4 8GB
Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-3466C16-16GTZ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965596-029.B00G 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-2800C15-8GRBB 8GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMSA8GX3M1A1600C11 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
Relatar um erro
×
Bug description
Source link