Samsung M393B2G70BH0-YK0 16GB vs Kingston KVR16N11/8-SP 8GB

Pontuação geral

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Pontuação geral

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M393B2G70BH0-YK0 16GB

Razões a considerar
Samsung M393B2G70BH0-YK0 16GB

Relatar um erro

Kingston KVR16N11/8-SP 8GB

Razões a considerar
Kingston KVR16N11/8-SP 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

26 63

Por volta de -142% menor latência
Velocidade de leitura mais rápida, GB/s

13.9 8.1

Valor médio nos testes
Velocidade de escrita mais rápida, GB/s

9.5 7.5

Valor médio nos testes

Especificações

Lista completa de especificações técnicas

Samsung M393B2G70BH0-YK0 16GB

Kingston KVR16N11/8-SP 8GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

63 26
Velocidade de leitura, GB/s

8.1 13.9
Velocidade de escrita, GB/s

7.5 9.5
Largura de banda de memória, mbps

12800 12800

Other

Descrição

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Tempos / Velocidade do relógio

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (Quanto mais, melhor)

1945 2432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Últimas comparações

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

AMD R534G1601U1S 4GB

AMD R534G1601U1S 4GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Kingston LV26D4S9S8HJ-8 8GB

Kingston LV26D4S9S8HJ-8 8GB