Samsung M4 70T2953EZ3-CE6 1GB vs Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Pontuação geral

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Pontuação geral

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M4 70T2953EZ3-CE6 1GB

Razões a considerar
Samsung M4 70T2953EZ3-CE6 1GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

3 26.4

Valor médio nos testes

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Razões a considerar
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

14 73

Por volta de -421% menor latência
Velocidade de escrita mais rápida, GB/s

19.8 1,423.3

Valor médio nos testes
Maior largura de banda de memória, mbps

17000 5300

Por volta de 3.21 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M4 70T2953EZ3-CE6 1GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

73 14
Velocidade de leitura, GB/s

3,510.5 26.4
Velocidade de escrita, GB/s

1,423.3 19.8
Largura de banda de memória, mbps

5300 17000

Other

Descrição

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
Tempos / Velocidade do relógio

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (Quanto mais, melhor)

476 4362

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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