RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Выберите RAM 1
Выберите RAM 2
Сравнить
DDR3 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2141
RAM
PNY Electronics 4GBH1X04F1AA28-15 4GB
Latency
30
Read speed
12.6
Write speed
7.9
№
2142
RAM
Hynix Semiconductor (Hyundai Electronics) DMT451E6AFR8C-PB 4GB
Latency
30
Read speed
13.0
Write speed
7.6
№
2143
RAM
Smart Modular SH5641G8FJ8NWRNSQR 8GB
Latency
30
Read speed
9.4
Write speed
5.1
№
2144
RAM
Kingston 99U5402-030.A01LF 2GB
Latency
30
Read speed
12.4
Write speed
7.5
№
2145
RAM
Samsung M471B1G73DM0-YK0 8GB
Latency
30
Read speed
10.4
Write speed
6.1
№
2146
RAM
Samsung M471B1G73EB0-CMA 8GB
Latency
30
Read speed
10.2
Write speed
8.8
№
2147
RAM
Micron Technology 18JSF25672AZ-1G1F1 2GB
Latency
30
Read speed
12.7
Write speed
6.9
№
2148
RAM
Smart Modular SH564128FJ8N6TNSQG 4GB
Latency
30
Read speed
10.5
Write speed
5.8
№
2149
RAM
Welink Solution Inc. B473F380 8GB
Latency
30
Read speed
9.2
Write speed
4.9
№
2150
RAM
Smart Modular SH564128FJ8NZRNSDG 4GB
Latency
30
Read speed
11.4
Write speed
8.1
№
2151
RAM
Crucial Technology BLT4G3D1869DT2TXOB 4GB
Latency
30
Read speed
16.2
Write speed
10.9
№
2152
RAM
PNY Electronics 64D0JKHNK 8GB
Latency
30
Read speed
11.0
Write speed
8.0
№
2153
RAM
Kingston 9905402-668.A00LF 4GB
Latency
30
Read speed
10.0
Write speed
5.9
№
2154
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6DFR8A-PB 8GB
Latency
30
Read speed
10.4
Write speed
5.8
№
2155
RAM
SpecTek Incorporated ZC512M6416V69AD2J- 4GB
Latency
30
Read speed
10.3
Write speed
6.8
№
2156
RAM
Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB
Latency
30
Read speed
11.5
Write speed
7.9
№
2157
RAM
Crucial Technology CT4G3S1067M.C16FKR 4GB
Latency
30
Read speed
10.1
Write speed
6.6
№
2158
RAM
Corsair CMT8GX3M2A1866C9 4GB
Latency
30
Read speed
16.3
Write speed
10.8
№
2159
RAM
Samsung M471B5273DM0-CH9 4GB
Latency
30
Read speed
6.6
Write speed
4.0
№
2160
RAM
Samsung M471B5273EB0-CH9 4GB
Latency
30
Read speed
9.1
Write speed
6.6
«
105
106
107
108
109
110
»
Последние сравнения
Kingston KVR533D2N4 512MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMU16GX4M2C3200C16 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kllisre DDR4-8GB 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 99U5723-002.A00G 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Kingston KVR533D2N4 512MB
Kingston 9905713-030.A00G 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Corsair CMD32GX4M2C3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Kingston 9905471-006.A00LF 4GB
Panram International Corporation PUD42133C158G2VS 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Samsung M378A4G43AB2-CVF 32GB
AMD R534G1601U1S-UO 4GB
EVGA 16G-D4-2800-MR 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
A-DATA Technology DDR4 2666 8GB
Corsair CMK16GX4M2D3000C16 8GB
Сообщить об ошибке
×
Bug description
Source link
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
