RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
О сайте
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Выберите RAM 1
Выберите RAM 2
Сравнить
DDR3 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2141
RAM
PNY Electronics 4GBH1X04F1AA28-15 4GB
Latency
30
Read speed
12.6
Write speed
7.9
№
2142
RAM
Hynix Semiconductor (Hyundai Electronics) DMT451E6AFR8C-PB 4GB
Latency
30
Read speed
13.0
Write speed
7.6
№
2143
RAM
Smart Modular SH5641G8FJ8NWRNSQR 8GB
Latency
30
Read speed
9.4
Write speed
5.1
№
2144
RAM
Kingston 99U5402-030.A01LF 2GB
Latency
30
Read speed
12.4
Write speed
7.5
№
2145
RAM
Samsung M471B1G73DM0-YK0 8GB
Latency
30
Read speed
10.4
Write speed
6.1
№
2146
RAM
Samsung M471B1G73EB0-CMA 8GB
Latency
30
Read speed
10.2
Write speed
8.8
№
2147
RAM
Micron Technology 18JSF25672AZ-1G1F1 2GB
Latency
30
Read speed
12.7
Write speed
6.9
№
2148
RAM
Smart Modular SH564128FJ8N6TNSQG 4GB
Latency
30
Read speed
10.5
Write speed
5.8
№
2149
RAM
Welink Solution Inc. B473F380 8GB
Latency
30
Read speed
9.2
Write speed
4.9
№
2150
RAM
Smart Modular SH564128FJ8NZRNSDG 4GB
Latency
30
Read speed
11.4
Write speed
8.1
№
2151
RAM
Crucial Technology BLT4G3D1869DT2TXOB 4GB
Latency
30
Read speed
16.2
Write speed
10.9
№
2152
RAM
PNY Electronics 64D0JKHNK 8GB
Latency
30
Read speed
11.0
Write speed
8.0
№
2153
RAM
Kingston 9905402-668.A00LF 4GB
Latency
30
Read speed
10.0
Write speed
5.9
№
2154
RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6DFR8A-PB 8GB
Latency
30
Read speed
10.4
Write speed
5.8
№
2155
RAM
SpecTek Incorporated ZC512M6416V69AD2J- 4GB
Latency
30
Read speed
10.3
Write speed
6.8
№
2156
RAM
Wilk Elektronik S.A. GR1600S3V64L11/4G 4GB
Latency
30
Read speed
11.5
Write speed
7.9
№
2157
RAM
Crucial Technology CT4G3S1067M.C16FKR 4GB
Latency
30
Read speed
10.1
Write speed
6.6
№
2158
RAM
Corsair CMT8GX3M2A1866C9 4GB
Latency
30
Read speed
16.3
Write speed
10.8
№
2159
RAM
Samsung M471B5273DM0-CH9 4GB
Latency
30
Read speed
6.6
Write speed
4.0
№
2160
RAM
Samsung M471B5273EB0-CH9 4GB
Latency
30
Read speed
9.1
Write speed
6.6
«
105
106
107
108
109
110
»
Последние сравнения
Kingston 9905471-002.A00LF 2GB
Kingston 9905704-007.A00G 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology CB8GS2400.C8D 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 99U5663-007.A00G 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK16GX4M4C3200C16 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CM4B16G7L2666A16K2-O 16GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M393A4K40CB2-CTD 32GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
V-GEN D4H4GL26A8TS5 4GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology ILG8GS2400A 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston 9965662-018.A00G 32GB
Samsung 1600 CL10 Series 8GB
Kingston 9905744-006.A00G 16GB
Kingston 9905403-038.A00G 4GB
G Skill Intl F4-2400C17-8GSXK 8GB
Сообщить об ошибке
×
Bug description
Source link