A-DATA Technology AD73I1B1672EG 2GB vs Crucial Technology CT4G4SFS8213.C8FHP 4GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Crucial Technology CT4G4SFS8213.C8FHP 4GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FHP 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FHP 4GB

报告一个错误

更快的读取速度，GB/s

14.6 12.2

测试中的平均数值
更快的写入速度，GB/s

10.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT4G4SFS8213.C8FHP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 26
读取速度，GB/s

12.2 14.6
写入速度，GB/s

8.5 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT325S6CFR8C-PB 2GB

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Crucial Technology CT4G4SFS8213.C8FHP 4GB

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Crucial Technology CT16G4SFRA266.C8FB 16GB

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Samsung M378B5273CH0-CH9 4GB

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

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Panram International Corporation W4N2666PS-16G 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB