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A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2400C15-8GFX 8GB

A-DATA Technology AD73I1B1672EG 2GB vs G Skill Intl F4-2400C15-8GFX 8GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
G Skill Intl F4-2400C15-8GFX 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GFX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2400C15-8GFX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    12.2 left arrow 16.1
  • 写入速度，GB/s
    8.5 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1677 left arrow 3010

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB

G Skill Intl F4-2400C15-8GFX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Corsair CMX32GX3M4A1600C11 8GB
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内存RAM
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Samsung M471B1G73DB0-YK0 8GB
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内存RAM
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内存RAM
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Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
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内存RAM
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内存RAM
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G Skill Intl F4-4500C19-8GTZKKE 8GB
内存RAM
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Samsung M471B5173DB0-YK0 4GB
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内存RAM