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A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB

A-DATA Technology AD73I1B1672EG 2GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
G Skill Intl F4-3200C14-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3200C14-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    12.2 left arrow 15.6
  • 写入速度，GB/s
    8.5 left arrow 13.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1677 left arrow 3000

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1G70BH0-YK0 8GB
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Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
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Kingston KWTHG4-MIE 16GB
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内存RAM
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
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AMD R5316G1609U2K 8GB
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Corsair CMK8GX4M1Z3200C16 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
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内存RAM
Samsung M393B1G70BH0-YK0 8GB
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Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
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Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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Essencore Limited KD4AGS88C-32N220D 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Samsung M378A2K43BB1-CPB 16GB
内存RAM