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A-DATA Technology AD73I1B1672EG 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

A-DATA Technology AD73I1B1672EG 2GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1B1672EG 2GB 需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 40
    左右 35% 更低的延时
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1B1672EG 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 40
  • 读取速度，GB/s
    12.2 left arrow 13.4
  • 写入速度，GB/s
    8.5 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1677 left arrow 2362

A-DATA Technology AD73I1B1672EG 2GB RAM的比较

Kingston ACR16D3LFS1KBG/2G 2GB
Kingston 9905702-029.A00G 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
Smart Modular SMS4TDC3C0K0446SCG 4GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KHX2400C12D4/16GX 16GB
Kingston KHX2400C12D4/16GX 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.AOOLF 4GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-2666C15-8GVK 8GB
G Skill Intl F4-2666C15-8GVK 8GB
内存RAM
Kingston ACR16D3LU1KNG/4G 4GB
Kingston ACR16D3LU1KNG/4G 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
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Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
内存RAM