A-DATA Technology AD73I1B1672EG 2GB vs Neo Forza NMUD480E86-3200 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

Neo Forza NMUD480E86-3200 8GB

需要考虑的原因
Neo Forza NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

20.1 12.2

测试中的平均数值
更快的写入速度，GB/s

16.1 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Neo Forza NMUD480E86-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

12.2 20.1
写入速度，GB/s

8.5 16.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1677 3778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD8GX4M2B3600C18 4GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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A-DATA Technology AD73I1B1672EG 2GB

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Neo Forza NMUD480E86-3200 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMD16GX4M2B3866C18 8GB

Corsair CMD16GX4M2B3866C18 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Roa Logic BV iGame DDR4 8G 3000 8GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB